BSO615CGHUMA1 Tech Spezifikatioune
Infineon Technologies - BSO615CGHUMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSO615CGHUMA1
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 20µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-DSO-8 | |
Serie | SIPMOS® | |
Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V | |
Power - Max | 2W | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 60V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.1A, 2A | |
Konfiguratioun | N and P-Channel | |
Basis Produktnummer | BSO615 |
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Produktiounsattriff | ||||
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Part Number | BSO615CGHUMA1 | BSO615CGXUMA1 | BSO615NGXUMA1 | BSO612CVG |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Supplier Device Package | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Serie | SIPMOS® | SIPMOS® | Automotive, AEC-Q101, SIPMOS® | - |
Power - Max | 2W | 2W (Ta) | 2W (Ta) | 2W (Ta) |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V | 380pF @ 25V, 460pF @ 25V | 380pF @ 25V | 340pF, 400pF @ 25V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Standard |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.1A, 2A | 3.1A (Ta), 2A (Ta) | 2.6A | 3A (Ta), 2A (Ta) |
Entworf fir Source Voltage (Vdss) | 60V | 60V | 60V | 60V |
Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V | 22.5nC @ 10V, 20nC @ 10V | 20nC @ 10V | 15.5nC @ 10V, 16nC @ 10V |
Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V | 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V | 150mOhm @ 2.6A, 4.5V | 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Konfiguratioun | N and P-Channel | N and P-Channel | 2 N-Channel (Dual) | - |
Vgs (th) (Max) @ Id | 2V @ 20µA | 2V @ 20µA, 2V @ 450µA | 2V @ 20µA | 4V @ 20µA, 4V @ 450µA |
Basis Produktnummer | BSO615 | BSO615 | BSO615 | - |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Eroflueden BSO615CGHUMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSO615CGHUMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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