BSO613SPVGXUMA1 Tech Spezifikatioune
Infineon Technologies - BSO613SPVGXUMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSO613SPVGXUMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-DSO-8-6 | |
| Serie | Automotive, AEC-Q101, SIPMOS® | |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3.44A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.44A (Ta) | |
| Basis Produktnummer | BSO613 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSO613SPVGXUMA1.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | BSO613SPVGXUMA1 | BSO4822 | BSO613SPV | BSO612CV |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | - |
| FET Typ | P-Channel | N-Channel | P-Channel | - |
| Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 60 V | 60V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 26.2 nC @ 5 V | 30 nC @ 10 V | 15.5nC @ 10V |
| Serie | Automotive, AEC-Q101, SIPMOS® | OptiMOS™ | SIPMOS® | SIPMOS® |
| Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3.44A, 10V | 10mOhm @ 12.7A, 10V | 130mOhm @ 3.44A, 10V | 120mOhm @ 3A, 10V |
| Supplier Device Package | PG-DSO-8-6 | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.44A (Ta) | 12.7A (Ta) | 3.44A (Ta) | 3A, 2A |
| Basis Produktnummer | BSO613 | BSO482 | - | BSO612 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 4V @ 1mA | 2V @ 55µA | 4V @ 1mA | 4V @ 20µA |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 25 V | 1640 pF @ 25 V | 875 pF @ 25 V | 340pF @ 25V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
Eroflueden BSO613SPVGXUMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSO613SPVGXUMA1 - Infineon Technologies.
BSO612CVInfineon TechnologiesMOSFET N/P-CH 60V 3A/2A 8SOICBSO615NInfineon TechnologiesMOSFET 2N-CH 60V 2.6A 8SOIC
BSO604NS2Cypress Semiconductor (Infineon Technologies)BSO615CCypress Semiconductor (Infineon Technologies)BSO4822Infineon TechnologiesMOSFET N-CH 30V 12.7A 8SOBSO612CVGInfineon TechnologiesBSO612 - 20V-60V COMPLEMENTARY MBSO613SPVInfineon TechnologiesMOSFET P-CH 60V 3.44A 8DSOBSO615NGHUMA1Infineon TechnologiesMOSFET 2N-CH 60V 2.6A 8SOICBSO604NS2XUMA1InfineonBSO615CGCypress Semiconductor (Infineon Technologies)BSO615NVCypress Semiconductor (Infineon Technologies)BSO615NGCypress Semiconductor (Infineon Technologies)BSO613BPVCypress Semiconductor (Infineon Technologies)
BSO612VVBsemiBSO615CGHUMA1Infineon TechnologiesMOSFET N/P-CH 60V 3.1A/2A 8SOICBSO613SPVGCypress Semiconductor (Infineon Technologies)BSO615NGXUMA1Infineon TechnologiesMOSFET N/P-CH 8-SOICBSO615CGXUMA1Infineon TechnologiesMOSFET N/P-CH 8-SOIC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.