BSO150N03MDG Tech Spezifikatioune
Infineon Technologies - BSO150N03MDG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSO150N03MDG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | - | |
| Technologie | - | |
| Supplier Device Package | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power Dissipation (Max) | - | |
| Package / Case | - | |
| Operatioun Temperatur | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | - | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| FET Typ | - | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | - | |
| Entworf fir Source Voltage (Vdss) | - | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSO150N03MDG.
| Produktiounsattriff |  |
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|
 |
|---|---|---|---|---|
| Part Number | BSO150N03MDG | BSO200N03S | BSO119N03S | BSO130N03MSG |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Technologie | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | - | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | - | 30 V | 30 V | 30 V |
| Supplier Device Package | - | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 |
| Mounting Type | - | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | - | 1.56W (Ta) | 1.56W (Ta) | 1.56W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | - | 6.5 nC @ 5 V | 13 nC @ 5 V | 17 nC @ 10 V |
| Vgs (th) (Max) @ Id | - | 2V @ 10µA | 2V @ 25µA | 2V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | 7A (Ta) | 9A (Ta) | 9A (Ta) |
| FET Typ | - | N-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | - | 840 pF @ 15 V | 1730 pF @ 15 V | 1300 pF @ 15 V |
| Package / Case | - | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Rds On (Max) @ Id, Vgs | - | 20mOhm @ 8.8A, 10V | 11.9mOhm @ 11A, 10V | 13mOhm @ 11.1A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | - | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
BSO200P03SCypress Semiconductor (Infineon Technologies)BSO130P03SHINFBSO200N03SInfineon TechnologiesMOSFET N-CH 30V 7A 8DSOBSO150N03Infineon TechnologiesMOSFET 2N-CH 30V 7.6A 8DSOBSO150N3Cypress Semiconductor (Infineon Technologies)BSO200N3SINFIEONBSO119N03SInfineon TechnologiesMOSFET N-CH 30V 9A 8DSOBSO130P03SCypress Semiconductor (Infineon Technologies)BSO130P03S HCypress Semiconductor (Infineon Technologies)BSO150N03MDGXUMA1Infineon TechnologiesMOSFET 2N-CH 30V 8A 8DSOBSO150N03MDCypress Semiconductor (Infineon Technologies)BSO119N3SCypress Semiconductor (Infineon Technologies)BSO200P03SHBSO200N3Cypress Semiconductor (Infineon Technologies)BSO130N03MSGInfineon TechnologiesSMALL SIGNAL N-CHANNEL MOSFETBSO200N03Infineon TechnologiesMOSFET 2N-CH 30V 6.6A 8DSOBSO130P03SHXUMA1InfineonBSO200N03GCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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