BSO119N03S Tech Spezifikatioune
Infineon Technologies - BSO119N03S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSO119N03S
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 25µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-DSO-8 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 11.9mOhm @ 11A, 10V | |
Power Dissipation (Max) | 1.56W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSO119N03S.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BSO119N03S | BSO130N03MSG | BSO083N03MSGXUMA1 | BSO094N03S |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 11.9mOhm @ 11A, 10V | 13mOhm @ 11.1A, 10V | 8.3mOhm @ 14A, 10V | 9.1mOhm @ 13A, 10V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Vgs (th) (Max) @ Id | 2V @ 25µA | 2V @ 250µA | 2V @ 250µA | 2V @ 30µA |
Serie | OptiMOS™ | OptiMOS™ 3 | OptiMOS™ | OptiMOS™ |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 15 V | 1300 pF @ 15 V | 2100 pF @ 15 V | 2300 pF @ 15 V |
Power Dissipation (Max) | 1.56W (Ta) | 1.56W (Ta) | 1.56W (Ta) | 1.56W (Ta) |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V | 17 nC @ 10 V | 27 nC @ 10 V | 18 nC @ 5 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Ta) | 9A (Ta) | 11A (Ta) | 10A (Ta) |
Eroflueden BSO119N03S PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSO119N03S - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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