BSC190N15NS3GATMA1 Tech Spezifikatioune
Infineon Technologies - BSC190N15NS3GATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC190N15NS3GATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 90µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TDSON-8-1 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 19mOhm @ 50A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 75 V | |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 8V, 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
Basis Produktnummer | BSC190 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC190N15NS3GATMA1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BSC190N15NS3GATMA1 | BSC200P03LSG | BSC205N10LSG | BSC190N12NS3GATMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | 48.5 nC @ 10 V | 41 nC @ 10 V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | - |
Basis Produktnummer | BSC190 | - | - | - |
FET Typ | N-Channel | P-Channel | N-Channel | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Power Dissipation (Max) | 125W (Tc) | 2.5W (Ta), 63W (Tc) | 76W (Tc) | - |
Fuert Volt (Max Rds On, Min Rds On) | 8V, 10V | 10V | 4.5V, 10V | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 9.9A (Ta), 12.5A (Tc) | 7.4A (Ta), 45A (Tc) | - |
Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 75 V | 2430 pF @ 15 V | 2900 pF @ 50 V | - |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | - |
Supplier Device Package | PG-TDSON-8-1 | PG-TDSON-8-6 | PG-TDSON-8-1 | - |
Rds On (Max) @ Id, Vgs | 19mOhm @ 50A, 10V | 20mOhm @ 12.5A, 10V | 20.5mOhm @ 45A, 10V | - |
Serie | OptiMOS™ | OptiMOS® | OptiMOS™ | - |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±25V | ±20V | - |
Vgs (th) (Max) @ Id | 4V @ 90µA | 1V @ 100µA | 2.4V @ 43µA | - |
Entworf fir Source Voltage (Vdss) | 150 V | 30 V | 100 V | - |
Eroflueden BSC190N15NS3GATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC190N15NS3GATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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