BSC205N10LSG Tech Spezifikatioune
Infineon Technologies - BSC205N10LSG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC205N10LSG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.4V @ 43µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TDSON-8-1 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 20.5mOhm @ 45A, 10V | |
Power Dissipation (Max) | 76W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.4A (Ta), 45A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC205N10LSG.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BSC205N10LSG | BSC190N15NS3GATMA1 | BSC200P03LSG | BSC240N12NS3G |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Vgs (Max) | ±20V | ±20V | ±25V | ±20V |
Supplier Device Package | PG-TDSON-8-1 | PG-TDSON-8-1 | PG-TDSON-8-6 | PG-TDSON-8-1 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS® | OptiMOS™ |
Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 50 V | 2420 pF @ 75 V | 2430 pF @ 15 V | 1900 pF @ 60 V |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
Vgs (th) (Max) @ Id | 2.4V @ 43µA | 4V @ 90µA | 1V @ 100µA | 4V @ 35µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 100 V | 150 V | 30 V | 120 V |
Rds On (Max) @ Id, Vgs | 20.5mOhm @ 45A, 10V | 19mOhm @ 50A, 10V | 20mOhm @ 12.5A, 10V | 24mOhm @ 31A, 10V |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 8V, 10V | 10V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.4A (Ta), 45A (Tc) | 50A (Tc) | 9.9A (Ta), 12.5A (Tc) | 37A (Tc) |
Power Dissipation (Max) | 76W (Tc) | 125W (Tc) | 2.5W (Ta), 63W (Tc) | 66W (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | 31 nC @ 10 V | 48.5 nC @ 10 V | 27 nC @ 10 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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