BSC123N10LSGATMA1 Tech Spezifikatioune
Infineon Technologies - BSC123N10LSGATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC123N10LSGATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.4V @ 72µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TDSON-8-1 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 12.3mOhm @ 50A, 10V | |
Power Dissipation (Max) | 114W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.6A (Ta), 71A (Tc) | |
Basis Produktnummer | BSC123 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC123N10LSGATMA1.
Produktiounsattriff | ||||
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Part Number | BSC123N10LSGATMA1 | BSC12DN20NS3GATMA1 | BSC123N08NS3GATMA1 | BSC146N10LS5ATMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 50 V | 680 pF @ 100 V | 1870 pF @ 40 V | 1300 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | 8.7 nC @ 10 V | 25 nC @ 10 V | 10 nC @ 4.5 V |
Vgs (th) (Max) @ Id | 2.4V @ 72µA | 4V @ 25µA | 3.5V @ 33µA | 2.3V @ 23µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.6A (Ta), 71A (Tc) | 11.3A (Tc) | 11A (Ta), 55A (Tc) | 44A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Basis Produktnummer | BSC123 | BSC12DN20 | BSC123 | BSC146 |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 80 V | 100 V |
Rds On (Max) @ Id, Vgs | 12.3mOhm @ 50A, 10V | 125mOhm @ 5.7A, 10V | 12.3mOhm @ 33A, 10V | 14.6mOhm @ 22A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 6V, 10V | 4.5V, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | PG-TDSON-8-1 | PG-TDSON-8-5 | PG-TDSON-8-1 | PG-TDSON-8-6 |
FET Feature | - | - | - | - |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ 5 |
Power Dissipation (Max) | 114W (Tc) | 50W (Tc) | 2.5W (Ta), 66W (Tc) | 2.5W (Ta), 52W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden BSC123N10LSGATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC123N10LSGATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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