BSC120N03MSGATMA1 Tech Spezifikatioune
Infineon Technologies - BSC120N03MSGATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC120N03MSGATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-5 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta), 39A (Tc) | |
| Basis Produktnummer | BSC120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC120N03MSGATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSC120N03MSGATMA1 | BSC123N10LSGATMA1 | BSC123N08NS3GATMA1 | BSC120N03LSG |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Basis Produktnummer | BSC120 | BSC123 | BSC123 | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 100 V | 80 V | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 6V, 10V | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) | 114W (Tc) | 2.5W (Ta), 66W (Tc) | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 10V | 12.3mOhm @ 50A, 10V | 12.3mOhm @ 33A, 10V | - |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 68 nC @ 10 V | 25 nC @ 10 V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta), 39A (Tc) | 10.6A (Ta), 71A (Tc) | 11A (Ta), 55A (Tc) | - |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | - |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2.4V @ 72µA | 3.5V @ 33µA | - |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V | 4900 pF @ 50 V | 1870 pF @ 40 V | - |
| Supplier Device Package | PG-TDSON-8-5 | PG-TDSON-8-1 | PG-TDSON-8-1 | - |
Eroflueden BSC120N03MSGATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC120N03MSGATMA1 - Infineon Technologies.
BSC123N10LSGATMA1Infineon TechnologiesMOSFET N-CH 100V 10.6/71A 8TDSONBSC119N03SCypress Semiconductor (Infineon Technologies)BSC120N03MSCypress Semiconductor (Infineon Technologies)BSC120N03LSCypress Semiconductor (Infineon Technologies)BSC123N10LSGCypress Semiconductor (Infineon Technologies)BSC119N3SGCypress Semiconductor (Infineon Technologies)BSC120N12LSGCypress Semiconductor (Infineon Technologies)BSC123N10LSCypress Semiconductor (Infineon Technologies)BSC123N08NS3GATMA1Infineon TechnologiesMOSFET N-CH 80V 11A/55A TDSONBSC123N08NS3Cypress Semiconductor (Infineon Technologies)BSC120N03LSGInfineon TechnologiesPOWER FIELD-EFFECT TRANSISTOR, 1BSC120N03LSGATMA1Infineon TechnologiesMOSFET N-CH 30V 12A/39A TDSONBSC119N03S MOSCypress Semiconductor (Infineon Technologies)BSC119N03SGCypress Semiconductor (Infineon Technologies)BSC120N03MSGCypress Semiconductor (Infineon Technologies)BSC123N08NS3GCypress Semiconductor (Infineon Technologies)BSC123N08NS3G MOSCypress Semiconductor (Infineon Technologies)BSC123N08NSGCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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