BSC100N06LS3GATMA1 Tech Spezifikatioune
Infineon Technologies - BSC100N06LS3GATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC100N06LS3GATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.2V @ 23µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-5 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 50A (Tc) | |
| Basis Produktnummer | BSC100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC100N06LS3GATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSC100N06LS3GATMA1 | BSC100N03LSG | BSC100N03MSG | BSC109N10NS3GATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Supplier Device Package | PG-TDSON-8-5 | PG-TDSON-8 | PG-TDSON-8-5 | PG-TDSON-8-1 |
| Serie | OptiMOS™ | OptiMOS™3 | OptiMOS™3M | OptiMOS™ |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 30 V | 1500 pF @ 15 V | 1700 pF @ 15 V | 2500 pF @ 50 V |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 10V | 10mOhm @ 30A, 10V | 10mOhm @ 30A, 10V | 10.9mOhm @ 46A, 10V |
| Basis Produktnummer | BSC100 | - | - | BSC109 |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 30 V | 100 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 2.2V @ 23µA | 2.2V @ 250µA | 2V @ 250µA | 3.5V @ 45µA |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 6V, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 50A (Tc) | 13A (Ta), 44A (Tc) | 12A (Ta), 44A (Tc) | 63A (Tc) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | 17 nC @ 10 V | 23 nC @ 10 V | 35 nC @ 10 V |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | 2.5W (Ta), 30W (Tc) | 2.5W (Ta), 30W (Tc) | 78W (Tc) |
| FET Feature | - | - | - | - |
Eroflueden BSC100N06LS3GATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC100N06LS3GATMA1 - Infineon Technologies.
BSC109N10NS3GCypress Semiconductor (Infineon Technologies)BSC100N06LS3GCypress Semiconductor (Infineon Technologies)BSC106N025SGCypress Semiconductor (Infineon Technologies)BSC100N06LSCypress Semiconductor (Infineon Technologies)BSC100N06LS3G MOSCypress Semiconductor (Infineon Technologies)BSC100N03LSGInfineon TechnologiesN-CHANNEL POWER MOSFETBSC100N03MSGInfineon TechnologiesN-CHANNEL POWER MOSFETBSC100N10NSINFBSC109N10NS3GATMA1Infineon TechnologiesMOSFET N-CH 100V 63A TDSON-8-1BSC100N10NSFGATMA1Infineon TechnologiesMOSFET N-CH 100V 11.4/90A 8TDSONBSC100N06LS3Cypress Semiconductor (Infineon Technologies)BSC109N10NS3Cypress Semiconductor (Infineon Technologies)BSC100N03MSG MOSCypress Semiconductor (Infineon Technologies)BSC100N10NSFGCypress Semiconductor (Infineon Technologies)BSC100N03MSCypress Semiconductor (Infineon Technologies)BSC109N10NS3G MOSCypress Semiconductor (Infineon Technologies)BSC105N10LSFGCypress Semiconductor (Infineon Technologies)BSC100N03MSGATMA1Infineon TechnologiesMOSFET N-CH 30V 12A/44A TDSON| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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