BSC100N03MSG Tech Spezifikatioune
Infineon Technologies - BSC100N03MSG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC100N03MSG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-5 | |
| Serie | OptiMOS™3M | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 44A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC100N03MSG.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSC100N03MSG | BSC098N10NS5ATMA1 | BSC100N03MSGATMA1 | BSC100N03LSG |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 15 V | 2100 pF @ 50 V | 1700 pF @ 15 V | 1500 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | 28 nC @ 10 V | 23 nC @ 10 V | 17 nC @ 10 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) | 2.5W (Ta), 69W (Tc) | 2.5W (Ta), 30W (Tc) | 2.5W (Ta), 30W (Tc) |
| Supplier Device Package | PG-TDSON-8-5 | PG-TDSON-8-7 | PG-TDSON-8-5 | PG-TDSON-8 |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V | 9.8mOhm @ 30A, 10V | 10mOhm @ 30A, 10V | 10mOhm @ 30A, 10V |
| Serie | OptiMOS™3M | OptiMOS™ | OptiMOS™ | OptiMOS™3 |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 6V, 10V | 4.5V, 10V | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 3.8V @ 36µA | 2V @ 250µA | 2.2V @ 250µA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 30 V | 100 V | 30 V | 30 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 44A (Tc) | 60A (Tc) | 12A (Ta), 44A (Tc) | 13A (Ta), 44A (Tc) |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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