AUIRFZ48Z Tech Spezifikatioune
Infineon Technologies - AUIRFZ48Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - AUIRFZ48Z
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 11mOhm @ 37A, 10V | |
Power Dissipation (Max) | 91W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 61A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies AUIRFZ48Z.
Produktiounsattriff | ||||
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Part Number | AUIRFZ48Z | AUIRFZ24NS | AUIRFZ44VZS | AUIRFZ44ZS |
Hiersteller | Infineon Technologies | Infineon Technologies | International Rectifier | International Rectifier |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Bulk | Tube | Bulk | Bulk |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | 20 nC @ 10 V | 65 nC @ 10 V | 43 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 11mOhm @ 37A, 10V | 70mOhm @ 10A, 10V | 12mOhm @ 34A, 10V | 13.9mOhm @ 31A, 10V |
Supplier Device Package | TO-220 | D-PAK (TO-252AA) | D2PAK | D2PAK |
Package / Case | TO-220-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 25 V | 370 pF @ 25 V | 1690 pF @ 25 V | 1420 pF @ 25 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 61A (Tc) | 17A (Tc) | 57A (Tc) | 51A (Tc) |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 60 V | 55 V |
Power Dissipation (Max) | 91W (Tc) | 3.8W (Ta), 45W (Tc) | 92W (Tc) | 80W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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