AUIRFZ24NSTRL Tech Spezifikatioune
International Rectifier - AUIRFZ24NSTRL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - AUIRFZ24NSTRL
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-PAK (TO-252AA) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V | |
Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier AUIRFZ24NSTRL.
Produktiounsattriff | ||||
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Part Number | AUIRFZ24NSTRL | AUIRFSL8408 | AUIRFZ44ZS | AUIRFU8405 |
Hiersteller | International Rectifier | International Rectifier | International Rectifier | International Rectifier |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 195A (Tc) | 51A (Tc) | 100A (Tc) |
Supplier Device Package | D-PAK (TO-252AA) | TO-262 | D2PAK | I-PAK |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) | 294W (Tc) | 80W (Tc) | 163W (Tc) |
Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V | 1.6mOhm @ 100A, 10V | 13.9mOhm @ 31A, 10V | 1.98mOhm @ 90A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V | 10820 pF @ 25 V | 1420 pF @ 25 V | 5171 pF @ 25 V |
FET Feature | - | - | - | - |
Package protegéieren | Bulk | Bulk | Bulk | Bulk |
Vgs (th) (Max) @ Id | 4V @ 250µA | 3.9V @ 250µA | 4V @ 250µA | 3.9V @ 100µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-251-3 Short Leads, IPak, TO-251AA |
Vgs (Max) | ±20V | - | ±20V | ±20V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 324 nC @ 10 V | 43 nC @ 10 V | 155 nC @ 10 V |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 55 V | 40 V | 55 V | 40 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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