AOW10N65 Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOW10N65 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOW10N65
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-262 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 1Ohm @ 5A, 10V | |
Power Dissipation (Max) | 250W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | |
Basis Produktnummer | AOW10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOW10N65.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOW10N65 | AOW2500 | AOW11S65 | AOW20S60 |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | 136 nC @ 10 V | 13.2 nC @ 10 V | 19.8 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | 11.5A (Ta), 152A (Tc) | 11A (Tc) | 20A (Tc) |
Serie | - | - | aMOS™ | aMOS™ |
Entworf fir Source Voltage (Vdss) | 650 V | 150 V | 650 V | 600 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Tube | Tube | Tube |
Rds On (Max) @ Id, Vgs | 1Ohm @ 5A, 10V | 6.2mOhm @ 20A, 10V | 399mOhm @ 5.5A, 10V | 199mOhm @ 10A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Supplier Device Package | TO-262 | TO-262 | TO-262 | TO-262 |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Power Dissipation (Max) | 250W (Tc) | 2.1W (Ta), 375W (Tc) | 198W (Tc) | 266W (Tc) |
Basis Produktnummer | AOW10 | AOW25 | AOW11 | AOW20 |
Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 25 V | 6460 pF @ 75 V | 646 pF @ 100 V | 1038 pF @ 100 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 6V, 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 3.5V @ 250µA | 4V @ 250µA | 4.1V @ 250µA |
Eroflueden AOW10N65 PDF DataDhusts an Alpha & Omega Semiconductor Inc. Dokumentatioun fir AOW10N65 - Alpha & Omega Semiconductor Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
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Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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