AOW10N60 Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOW10N60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOW10N60
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-262 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V | |
Power Dissipation (Max) | 250W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | |
Basis Produktnummer | AOW10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOW10N60.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOW10N60 | AOW12N60 | AOW15S60 | AOW14N50 |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | - | - | aMOS™ | - |
Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V | 550mOhm @ 6A, 10V | 290mOhm @ 7.5A, 10V | 380mOhm @ 7A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 250W (Tc) | 278W (Tc) | 208W (Tc) | 278W (Tc) |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4.5V @ 250µA | 3.8V @ 250µA | 4.5V @ 250µA |
Package protegéieren | Tube | Tube | Tube | Tube |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 50 nC @ 10 V | 15.6 nC @ 10 V | 51 nC @ 10 V |
Supplier Device Package | TO-262 | TO-262 | TO-262 | TO-262 |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 500 V |
Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V | 2100 pF @ 25 V | 717 pF @ 100 V | 2297 pF @ 25 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Basis Produktnummer | AOW10 | AOW12 | AOW15 | AOW14 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | 12A (Tc) | 15A (Tc) | 14A (Tc) |
Eroflueden AOW10N60 PDF DataDhusts an Alpha & Omega Semiconductor Inc. Dokumentatioun fir AOW10N60 - Alpha & Omega Semiconductor Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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