AOI950A70 Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOI950A70 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOI950A70
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 4.1V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251A | |
Serie | aMOS5™ | |
Rds On (Max) @ Id, Vgs | 950mOhm @ 1A, 10V | |
Power Dissipation (Max) | 56.5W (Tc) | |
Package / Case | TO-251-3 Stub Leads, IPak | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 461 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 700 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | |
Basis Produktnummer | AOI950 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOI950A70.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOI950A70 | AOI66406 | AOI4T60P | AOI4T60 |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Input Capacitance (Ciss) (Max) @ Vds | 461 pF @ 100 V | 1480 pF @ 20 V | 522 pF @ 100 V | 460 pF @ 100 V |
Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tube |
Basis Produktnummer | AOI950 | AOI664 | AOI4 | AOI4 |
Power Dissipation (Max) | 56.5W (Tc) | 6.2W (Ta), 52W (Tc) | 83W (Tc) | 83W (Tc) |
Supplier Device Package | TO-251A | TO-251A | TO-251A | TO-251A |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 25A (Ta), 60A (Tc) | 4A (Tc) | 4A (Tc) |
Entworf fir Source Voltage (Vdss) | 700 V | 40 V | 600 V | 600 V |
Serie | aMOS5™ | AlphaSGT™ | - | - |
Rds On (Max) @ Id, Vgs | 950mOhm @ 1A, 10V | 6.1mOhm @ 20A, 10V | 2.1Ohm @ 2A, 10V | 2.1Ohm @ 1A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | 30 nC @ 10 V | 15 nC @ 10 V | 15 nC @ 10 V |
Vgs (Max) | ±20V | ±20V | ±30V | ±30V |
Package / Case | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak |
Vgs (th) (Max) @ Id | 4.1V @ 250µA | 2.5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
FET Feature | - | - | - | - |
Eroflueden AOI950A70 PDF DataDhusts an Alpha & Omega Semiconductor Inc. Dokumentatioun fir AOI950A70 - Alpha & Omega Semiconductor Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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