AOI4T60P Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOI4T60P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOI4T60P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251A | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 2.1Ohm @ 2A, 10V | |
Power Dissipation (Max) | 83W (Tc) | |
Package / Case | TO-251-3 Stub Leads, IPak | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -50°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 522 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
Basis Produktnummer | AOI4 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOI4T60P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOI4T60P | AOI508 | AOI4S60 | AOI4N60 |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 22A (Ta), 70A (Tc) | 4A (Tc) | 4A (Tc) |
FET Feature | - | - | - | - |
Package protegéieren | Tube | Tube | Tube | Tube |
Power Dissipation (Max) | 83W (Tc) | 2.5W (Ta), 50W (Tc) | 56.8W (Tc) | 104W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 600 V | 30 V | 600 V | 600 V |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Package / Case | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak |
Operatioun Temperatur | -50°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) |
Basis Produktnummer | AOI4 | AOI50 | AOI4 | AOI4 |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | 49 nC @ 10 V | 6 nC @ 10 V | 14.5 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 2.1Ohm @ 2A, 10V | 3mOhm @ 20A, 10V | 900mOhm @ 2A, 10V | 2.3Ohm @ 2A, 10V |
Supplier Device Package | TO-251A | TO-251A | TO-251A | TO-251A |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (th) (Max) @ Id | 5V @ 250µA | 2.2V @ 250µA | 4.1V @ 250µA | 4.5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 522 pF @ 100 V | 2010 pF @ 15 V | 263 pF @ 100 V | 640 pF @ 25 V |
Serie | - | - | aMOS™ | - |
Eroflueden AOI4T60P PDF DataDhusts an Alpha & Omega Semiconductor Inc. Dokumentatioun fir AOI4T60P - Alpha & Omega Semiconductor Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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