NVTR01P02LT1G Tech Spezifikatioune
onsemi - NVTR01P02LT1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVTR01P02LT1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.25V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | Automotive, AEC-Q101 | |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 750mA, 4.5V | |
| Power Dissipation (Max) | 400mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | - | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 5 V | |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 4 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.3A (Ta) | |
| Basis Produktnummer | NVTR01 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NVTR01P02LT1G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NVTR01P02LT1G | NVTFWS9D6P04M8LTAG | NVTFS9D6P04M8LTAG | NVTFWS015N04CTAG |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Vgs (Max) | ±12V | ±20V | ±20V | ±20V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN |
| Vgs (th) (Max) @ Id | 1.25V @ 250µA | 2.4V @ 580µA | 2.4V @ 580µA | 3.5V @ 20µA |
| Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
| Supplier Device Package | SOT-23-3 (TO-236) | 8-WDFN (3.3x3.3) | 8-WDFN (3.3x3.3) | 8-WDFN (3.3x3.3) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 400mW (Ta) | 3.2W (Ta), 75W (Tc) | 3.2W (Ta), 75W (Tc) | 2.9W (Ta), 23W (Tc) |
| Operatioun Temperatur | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 4.5V, 10V | 4.5V, 10V | 10V |
| Basis Produktnummer | NVTR01 | NVTFWS9 | NVTFS9 | NVTFWS015 |
| Entworf fir Source Voltage (Vdss) | 20 V | 40 V | 40 V | 40 V |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 750mA, 4.5V | 9.5mOhm @ 20A, 10V | 9.5mOhm @ 20A, 10V | 17.3mOhm @ 7.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 5 V | 2312 pF @ 20 V | 2312 pF @ 20 V | 325 pF @ 25 V |
| FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 4 V | 34.6 nC @ 10 V | 34.6 nC @ 10 V | 6.3 nC @ 10 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.3A (Ta) | 13A (Ta), 64A (Tc) | 13A (Ta), 64A (Tc) | 9.4A (Ta), 27A (Tc) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden NVTR01P02LT1G PDF DataDhusts an onsemi Dokumentatioun fir NVTR01P02LT1G - onsemi.
NVTFWS9D6P04M8LTAGonsemiMOSFET P-CH 40V 13A/64A 8WDFN
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NVTJD4001NT1GonsemiMOSFET 2N-CH 30V 0.25A SC-88NVTR4502PT1GonsemiMOSFET P-CH 30V 1.13A SOT23-3NVTR01P02TVBSEMI| Allgemeng Länner Login logistesch Zäit Referenz | ||
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| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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