NVTFWS9D6P04M8LTAG Tech Spezifikatioune
onsemi - NVTFWS9D6P04M8LTAG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVTFWS9D6P04M8LTAG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.4V @ 580µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-WDFN (3.3x3.3) | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V | |
Power Dissipation (Max) | 3.2W (Ta), 75W (Tc) | |
Package / Case | 8-PowerWDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2312 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 34.6 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta), 64A (Tc) | |
Basis Produktnummer | NVTFWS9 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NVTFWS9D6P04M8LTAG | NVTFWS052P04M8LTAG | NVTFS9D6P04M8LTAG | NVTFS6H850NTAG |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Supplier Device Package | 8-WDFN (3.3x3.3) | 8-WDFN (3.3x3.3) | 8-WDFN (3.3x3.3) | 8-WDFN (3.3x3.3) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | NVTFWS9 | NVTFWS052 | NVTFS9 | NVTFS6 |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
Vgs (th) (Max) @ Id | 2.4V @ 580µA | 2.4V @ 95µA | 2.4V @ 580µA | 4V @ 70µA |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 40 V | 80 V |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V | 69mOhm @ 5A, 10V | 9.5mOhm @ 20A, 10V | 9.5mOhm @ 10A, 10V |
Package / Case | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta), 64A (Tc) | 4.7A (Ta), 13.2A (Tc) | 13A (Ta), 64A (Tc) | 11A (Ta), 68A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 2312 pF @ 20 V | 424 pF @ 20 V | 2312 pF @ 20 V | 1140 pF @ 40 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 34.6 nC @ 10 V | 6.3 nC @ 10 V | 34.6 nC @ 10 V | 19 nC @ 10 V |
Power Dissipation (Max) | 3.2W (Ta), 75W (Tc) | 2.9W (Ta), 23W (Tc) | 3.2W (Ta), 75W (Tc) | 3.2W (Ta), 107W (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden NVTFWS9D6P04M8LTAG PDF DataDhusts an onsemi Dokumentatioun fir NVTFWS9D6P04M8LTAG - onsemi.
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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