NTR2101PT1 Tech Spezifikatioune
onsemi - NTR2101PT1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTR2101PT1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 52mOhm @ 3.5A, 4.5V | |
Power Dissipation (Max) | 960mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1173 pF @ 4 V | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 8 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.7A (Ta) | |
Basis Produktnummer | NTR210 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | RoHS net konform |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTR2101PT1 | NTR1P02T1 | NTR1P02LT1G | NTR1P02LT3G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Input Capacitance (Ciss) (Max) @ Vds | 1173 pF @ 4 V | 165 pF @ 5 V | 225 pF @ 5 V | 225 pF @ 5 V |
Rds On (Max) @ Id, Vgs | 52mOhm @ 3.5A, 4.5V | 180mOhm @ 1.5A, 10V | 220mOhm @ 750mA, 4.5V | 220mOhm @ 750mA, 4.5V |
Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 4.5V, 10V | 2.5V, 4.5V | 2.5V, 4.5V |
FET Feature | - | - | - | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Power Dissipation (Max) | 960mW (Ta) | 400mW (Ta) | 400mW (Ta) | 400mW (Ta) |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | 2.5 nC @ 5 V | 5.5 nC @ 4 V | 5.5 nC @ 4 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.7A (Ta) | 1A (Ta) | 1.3A (Ta) | 1.3A (Ta) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 8 V | 20 V | 20 V | 20 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | NTR210 | NTR1P0 | NTR1P02 | NTR1P02 |
Vgs (Max) | ±8V | ±20V | ±12V | ±12V |
Serie | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Vgs (th) (Max) @ Id | 1V @ 250µA | 2.3V @ 250µA | 1.25V @ 250µA | 1.25V @ 250µA |
Eroflueden NTR2101PT1 PDF DataDhusts an onsemi Dokumentatioun fir NTR2101PT1 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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