NTMSD6N303R2G Tech Spezifikatioune
onsemi - NTMSD6N303R2G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTMSD6N303R2G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | FETKY™ | |
Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V | |
Power Dissipation (Max) | 2W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 24 V | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | Schottky Diode (Isolated) | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) | |
Basis Produktnummer | NTMSD6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTMSD6N303R2G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTMSD6N303R2G | NTMSD3P303R2 | NTMTS0D7N06CLTXG | NTMSD3P102R2 |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | - | 8-PowerTDFN | 8-SOIC (0.154", 3.90mm Width) |
Serie | FETKY™ | - | - | FETKY™ |
Power Dissipation (Max) | 2W (Ta) | - | 5W (Ta), 294.6W (Tc) | 730mW (Ta) |
Entworf fir Source Voltage (Vdss) | 30 V | - | 60 V | 20 V |
Supplier Device Package | 8-SOIC | - | 8-DFNW (8.3x8.4) | 8-SOIC |
Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 24 V | - | 16200 pF @ 25 V | 750 pF @ 16 V |
Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V | - | 0.68mOhm @ 50A, 10V | 85mOhm @ 3.05A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | - | 2.5V @ 250µA | 2.5V @ 250µA |
Basis Produktnummer | NTMSD6 | NTMSD3 | NTMTS0 | NTMSD3 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 4.5V, 10V | 4.5V, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | N-Channel | - | N-Channel | P-Channel |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | Schottky Diode (Isolated) | - | - | Schottky Diode (Isolated) |
Vgs (Max) | ±20V | - | ±20V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | - | 225 nC @ 10 V | 25 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) | - | 62.2A (Ta), 477A (Tc) | 2.34A (Ta) |
Eroflueden NTMSD6N303R2G PDF DataDhusts an onsemi Dokumentatioun fir NTMSD6N303R2G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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