NTMSD6N303R2 Tech Spezifikatioune
onsemi - NTMSD6N303R2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTMSD6N303R2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | FETKY™ | |
Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V | |
Power Dissipation (Max) | 2W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 24 V | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | Schottky Diode (Isolated) | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) | |
Basis Produktnummer | NTMSD6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTMSD6N303R2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTMSD6N303R2 | NTMT090N65S3HF | NTMSD2P102LR2 | NTMTS0D7N06CLTXG |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 30 V | 650 V | 20 V | 60 V |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 4-PowerTSFN | 8-SOIC (0.154", 3.90mm Width) | 8-PowerTDFN |
Vgs (Max) | ±20V | ±30V | ±10V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | NTMSD6 | - | NTMSD2 | NTMTS0 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 2.5V, 4.5V | 4.5V, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V | 90mOhm @ 18A, 10V | 90mOhm @ 2.4A, 4.5V | 0.68mOhm @ 50A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 24 V | 2930 pF @ 400 V | 750 pF @ 16 V | 16200 pF @ 25 V |
Power Dissipation (Max) | 2W (Ta) | 272W (Tc) | 710mW (Ta) | 5W (Ta), 294.6W (Tc) |
FET Feature | Schottky Diode (Isolated) | - | Schottky Diode (Isolated) | - |
Supplier Device Package | 8-SOIC | 4-PQFN (8x8) | 8-SOIC | 8-DFNW (8.3x8.4) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 66 nC @ 10 V | 18 nC @ 4.5 V | 225 nC @ 10 V |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Serie | FETKY™ | SuperFET® III, FRFET® | FETKY™ | - |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 5V @ 860µA | 1.5V @ 250µA | 2.5V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) | 36A (Tc) | 2.3A (Ta) | 62.2A (Ta), 477A (Tc) |
Eroflueden NTMSD6N303R2 PDF DataDhusts an onsemi Dokumentatioun fir NTMSD6N303R2 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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