NJVMJD122T4G Tech Spezifikatioune
onsemi - NJVMJD122T4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NJVMJD122T4G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A | |
| Transistor Type | NPN - Darlington | |
| Supplier Device Package | DPAK | |
| Serie | Automotive, AEC-Q101 | |
| Power - Max | 1.75 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 4MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V | |
| Aktuell - Kollektorat Cutoff (Max) | 10µA | |
| Aktuell - Sammler (Ic) (Max) | 8 A | |
| Basis Produktnummer | NJVMJD122 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NJVMJD122T4G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NJVMJD122T4G | NJVMJD243T4G | NJVMJD117T4G | NJVMJD128T4G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Aktuell - Sammler (Ic) (Max) | 8 A | 4 A | 2 A | 8 A |
| Frequenz - Iwwergang | 4MHz | 40MHz | 25MHz | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power - Max | 1.75 W | 1.4 W | 1.75 W | 1.75 W |
| Transistor Type | NPN - Darlington | NPN | PNP - Darlington | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A | 600mV @ 100mA, 1A | 3V @ 40mA, 4A | 4V @ 80mA, 8A |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | Automotive, AEC-Q101 | - | - | - |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V | 40 @ 200mA, 1V | 1000 @ 2A, 3V | 1000 @ 4A, 4V |
| Supplier Device Package | DPAK | DPAK | DPAK | DPAK |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V | 100 V | 120 V |
| Basis Produktnummer | NJVMJD122 | NJVMJD243 | NJVMJD117 | NJVMJD128 |
| Aktuell - Kollektorat Cutoff (Max) | 10µA | 100nA (ICBO) | 20µA | 5mA |
Eroflueden NJVMJD122T4G PDF DataDhusts an onsemi Dokumentatioun fir NJVMJD122T4G - onsemi.
NJV7391VJRCNJVMJD243T4GonsemiTRANS NPN 100V 4A DPAKNJVMJD117T4GonsemiTRANS PNP DARL 100V 2A DPAKNJVMJD128T4GonsemiTRANS PNP DARL 120V 8A DPAK
NJVMJB41CT4GFairchild SemiconductorTRANS NPN D2PAKNJVMJD31CGonsemiTRANS NPN 100V 3A DPAKNJVMJD127T4GonsemiTRANS PNP DARL 100V 8A DPAK
NJVMJB41CT4GonsemiTRANS NPN 100V 6A D2PAK-3NJVMJD2955T4GonsemiTRANS PNP 60V 10A DPAKNJVMJB44H11T4GonsemiTRANS NPN 80V 10A D2PAKNJVMJD3055T4GonsemiTRANS NPN 60V 10A DPAKNJVMJD210T4GonsemiTRANS PNP 25V 5A DPAKNJVMJD253T4G-VF01onsemiTRANS PNP 100V 4A DPAKNJVMJB45H11T4GonsemiTRANS PNP 80V 10A D2PAKNJVMJD253T4GonsemiTRANS PNP 100V 4A DPAKNJVMJD112T4GonsemiTRANS NPN DARL 100V 2A DPAKNJVMJB44H11T4GFairchild SemiconductorTRANS NPN 80V 10A D2PAKNJVMJB42CT4GonsemiTRANS PNP 100V 6A D2PAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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