NJVMJD117T4G Tech Spezifikatioune
onsemi - NJVMJD117T4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NJVMJD117T4G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | |
| Transistor Type | PNP - Darlington | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Power - Max | 1.75 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 25MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V | |
| Aktuell - Kollektorat Cutoff (Max) | 20µA | |
| Aktuell - Sammler (Ic) (Max) | 2 A | |
| Basis Produktnummer | NJVMJD117 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NJVMJD117T4G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NJVMJD117T4G | NJVMJD3055T4G | NJVMJB45H11T4G | NJVMJD127T4G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Basis Produktnummer | NJVMJD117 | NJVMJD3055 | NJVMJB45 | NJVMJD127 |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Frequenz - Iwwergang | 25MHz | 2MHz | 40MHz | - |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V | 20 @ 4A, 4V | 40 @ 4A, 1V | 1000 @ 4A, 4V |
| Supplier Device Package | DPAK | DPAK | D²PAK | DPAK |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Aktuell - Kollektorat Cutoff (Max) | 20µA | 50µA | 10µA | 10µA |
| Serie | - | - | - | - |
| Transistor Type | PNP - Darlington | NPN | PNP | PNP - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 60 V | 80 V | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | 8V @ 3.3A, 10A | 1V @ 400mA, 8A | 4V @ 80mA, 8A |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Sammler (Ic) (Max) | 2 A | 10 A | 10 A | 8 A |
| Power - Max | 1.75 W | 1.75 W | 2 W | 20 W |
Eroflueden NJVMJD117T4G PDF DataDhusts an onsemi Dokumentatioun fir NJVMJD117T4G - onsemi.
NJVMJD3055T4GonsemiTRANS NPN 60V 10A DPAKNJVMJB45H11T4GonsemiTRANS PNP 80V 10A D2PAKNJVMJD127T4GonsemiTRANS PNP DARL 100V 8A DPAKNJVMJB42CT4GonsemiTRANS PNP 100V 6A D2PAKNJVMJD112T4GonsemiTRANS NPN DARL 100V 2A DPAK
NJV7002MJRCNJVMJB44H11T4GonsemiTRANS NPN 80V 10A D2PAKNJVMJD128T4GonsemiTRANS PNP DARL 120V 8A DPAKNJVMJD122T4GonsemiTRANS NPN DARL 100V 8A DPAK
NJVMJB44H11T4GFairchild SemiconductorTRANS NPN 80V 10A D2PAKNJVMJD210T4GonsemiTRANS PNP 25V 5A DPAKNJVMJD253T4G-VF01onsemiTRANS PNP 100V 4A DPAKNJV7391VJRCNJVMJD243T4GonsemiTRANS NPN 100V 4A DPAKNJVMJB41CT4GFairchild SemiconductorTRANS NPN D2PAKNJVMJD253T4GonsemiTRANS PNP 100V 4A DPAKNJVMJD2955T4GonsemiTRANS PNP 60V 10A DPAKNJVMJB41CT4GonsemiTRANS NPN 100V 6A D2PAK-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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