HGTG5N120BND Tech Spezifikatioune
onsemi - HGTG5N120BND technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HGTG5N120BND
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 5A | |
| Test Condition | 960V, 5A, 25Ohm, 15V | |
| Td (on / off) @ 25 ° C | 22ns/160ns | |
| Energie schalten | 450µJ (on), 390µJ (off) | |
| Supplier Device Package | TO-247-3 | |
| Serie | - | |
| Reverse Recovery Time (trr) | 65 ns | |
| Power - Max | 167 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | NPT | |
| Gate Charge | 53 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 40 A | |
| Aktuell - Sammler (Ic) (Max) | 21 A | |
| Basis Produktnummer | HGTG5N120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HGTG5N120BND.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | HGTG5N120BND | HGTP10N120BN | HGTG7N60A4D | HGTG40N60C3 |
| Hiersteller | onsemi | onsemi | onsemi | Harris Corporation |
| Td (on / off) @ 25 ° C | 22ns/160ns | 23ns/165ns | 11ns/100ns | 47ns/185ns |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Input Type | Standard | Standard | Standard | Standard |
| Supplier Device Package | TO-247-3 | TO-220-3 | TO-247-3 | TO-247 |
| Power - Max | 167 W | 298 W | 125 W | 291 W |
| Test Condition | 960V, 5A, 25Ohm, 15V | 960V, 10A, 10Ohm, 15V | 390V, 7A, 25Ohm, 15V | 480V, 40A, 3Ohm, 15V |
| Gate Charge | 53 nC | 100 nC | 37 nC | 395 nC |
| Energie schalten | 450µJ (on), 390µJ (off) | 320µJ (on), 800µJ (off) | 55µJ (on), 60µJ (off) | 850mJ (on), 1mJ (off) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Sammler (Ic) (Max) | 21 A | 35 A | 34 A | 75 A |
| Aktuell - Sammler Pulséiert (Icm) | 40 A | 80 A | 56 A | 300 A |
| IGBT Type | NPT | NPT | - | - |
| Reverse Recovery Time (trr) | 65 ns | - | 34 ns | - |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| Basis Produktnummer | HGTG5N120 | HGTP10 | HGTG7N60 | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | 1200 V | 600 V | 600 V |
| Serie | - | - | - | - |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 5A | 2.7V @ 15V, 10A | 2.7V @ 15V, 7A | 1.8V @ 15V, 40A |
| Package / Case | TO-247-3 | TO-220-3 | TO-247-3 | TO-247-3 |
Eroflueden HGTG5N120BND PDF DataDhusts an onsemi Dokumentatioun fir HGTG5N120BND - onsemi.
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HGTN30N60A4DIntersil (Renesas Electronics Corporation)IGBT ModuleHGTG40N60A4DFairchild (onsemi)IGBT ModuleHGTP11N120CNDFairchild (onsemi)HGTG40N60C3Harris Corporation75A, 600V, N-CHANNEL IGBTHGTP12N60A4Harris CorporationHGTP12N60 - 24A, 600V, RUGGED, UHGTG40N60B3onsemiIGBT 600V 70A 290W TO247HGTG40N60A4Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOHGTG30N60C3DonsemiIGBT 600V 63A TO247-3HGTP11N120CNFairchild (onsemi)HGTG7N60A4DHarris CorporationN-CHANNEL IGBTHGTG7N60A4onsemiIGBT 600V 34A 125W TO247HGTP12N60A4Fairchild SemiconductorUFS SERIES N-CH IGBTHGTG40N60A4onsemiIGBT 600V 75A TO247-3HGTG40N60B3Harris Corporation70A, 600V, UFS N-CHANNEL IGBT| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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