HGTG40N60A4 Tech Spezifikatioune
onsemi - HGTG40N60A4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HGTG40N60A4
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A | |
| Test Condition | 390V, 40A, 2.2Ohm, 15V | |
| Td (on / off) @ 25 ° C | 25ns/145ns | |
| Energie schalten | 400µJ (on), 370µJ (off) | |
| Supplier Device Package | TO-247-3 | |
| Serie | - | |
| Power - Max | 625 W | |
| Package / Case | TO-247-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | - | |
| Gate Charge | 350 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 300 A | |
| Aktuell - Sammler (Ic) (Max) | 75 A | |
| Basis Produktnummer | HGTG40 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HGTG40N60A4.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | HGTG40N60A4 | HGTG30N60B3 | HGTG30N60C3D | HGTG40N60A4 |
| Hiersteller | onsemi | Harris Corporation | onsemi | Fairchild Semiconductor |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | 600 V | 600 V |
| Basis Produktnummer | HGTG40 | - | HGTG30 | - |
| Aktuell - Sammler Pulséiert (Icm) | 300 A | 220 A | 252 A | 300 A |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A | 1.9V @ 15V, 30A | 1.8V @ 15V, 30A | 2.7V @ 15V, 40A |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| Gate Charge | 350 nC | 170 nC | 162 nC | 350 nC |
| Test Condition | 390V, 40A, 2.2Ohm, 15V | 480V, 30A, 3Ohm, 15V | - | 390V, 40A, 2.2Ohm, 15V |
| Power - Max | 625 W | 208 W | 208 W | 625 W |
| Supplier Device Package | TO-247-3 | TO-247 | TO-247-3 | TO-247 |
| Aktuell - Sammler (Ic) (Max) | 75 A | 60 A | 63 A | 75 A |
| Input Type | Standard | Standard | Standard | Standard |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Energie schalten | 400µJ (on), 370µJ (off) | 500µJ (on), 680µJ (off) | 1.05mJ (on), 2.5mJ (off) | 400µJ (on), 370µJ (off) |
| Td (on / off) @ 25 ° C | 25ns/145ns | 36ns/137ns | - | 25ns/145ns |
| IGBT Type | - | - | - | - |
| Serie | - | - | - | - |
Eroflueden HGTG40N60A4 PDF DataDhusts an onsemi Dokumentatioun fir HGTG40N60A4 - onsemi.
HGTG30N60B3Harris Corporation600 V, NPT IGBTHGTG30N60C3DonsemiIGBT 600V 63A TO247-3HGTG40N60A4Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOHGTG40N60C3Harris Corporation75A, 600V, N-CHANNEL IGBTHGTG7N60A4DonsemiIGBT 600V 34A 125W TO247HGTG7N60A4onsemiIGBT 600V 34A 125W TO247HGTG3N60B3Fairchild (onsemi)HGTG30N60C3Harris Corporation63A, 600V, UFS N-CHANNEL IGBTHGTG40N60A4DFairchild (onsemi)IGBT ModuleHGTG40N60B3Harris Corporation70A, 600V, UFS N-CHANNEL IGBTHGTG30N60B3onsemiIGBT 600V 60A 208W TO247HGTG7N60A4DHarris CorporationN-CHANNEL IGBTHGTG40N60B3onsemiIGBT 600V 70A 290W TO247HGTG30N60D1DHIRHGTG30N60C3DFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTO
HGTN30N60A4DIntersil (Renesas Electronics Corporation)IGBT ModuleHGTG30N60B3DonsemiIGBT 600V 60A TO247-3HGTG5N120BNDonsemiIGBT NPT 1200V 21A TO247-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.