FQA7N90M Tech Spezifikatioune
onsemi - FQA7N90M technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQA7N90M
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 3.5A, 10V | |
Power Dissipation (Max) | 210W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 900 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | |
Basis Produktnummer | FQA7 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQA7N90M.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQA7N90M | FQA90N08 | FQA7N80 | FQA8N90C |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | 90A (Tc) | 7.2A (Tc) | 8A (Tc) |
Package protegéieren | Tube | Bulk | Tube | Tube |
Supplier Device Package | TO-3P | TO-3PN | TO-3P | TO-3P |
Serie | QFET® | QFET® | QFET® | QFET® |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | 110 nC @ 10 V | 52 nC @ 10 V | 45 nC @ 10 V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 3.5A, 10V | 16mOhm @ 45A, 10V | 1.5Ohm @ 3.6A, 10V | 1.9Ohm @ 4A, 10V |
Entworf fir Source Voltage (Vdss) | 900 V | 80 V | 800 V | 900 V |
Vgs (Max) | ±30V | ±25V | ±30V | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 25 V | 3250 pF @ 25 V | 1850 pF @ 25 V | 2080 pF @ 25 V |
Power Dissipation (Max) | 210W (Tc) | 214W (Tc) | 198W (Tc) | 240W (Tc) |
Basis Produktnummer | FQA7 | - | FQA7 | - |
Eroflueden FQA7N90M PDF DataDhusts an onsemi Dokumentatioun fir FQA7N90M - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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