FQA7N80 Tech Spezifikatioune
onsemi - FQA7N80 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQA7N80
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.6A, 10V | |
Power Dissipation (Max) | 198W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.2A (Tc) | |
Basis Produktnummer | FQA7 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQA7N80.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQA7N80 | FQA7N60 | FQA7N80C | FQA8N100C |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | 38 nC @ 10 V | 35 nC @ 10 V | 70 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Power Dissipation (Max) | 198W (Tc) | 152W (Tc) | 198W (Tc) | 225W (Tc) |
Entworf fir Source Voltage (Vdss) | 800 V | 600 V | 800 V | 1000 V |
Serie | QFET® | QFET® | QFET® | QFET® |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.6A, 10V | 1Ohm @ 3.9A, 10V | 1.9Ohm @ 3.5A, 10V | 1.45Ohm @ 4A, 10V |
Basis Produktnummer | FQA7 | FQA7 | - | FQA8 |
Supplier Device Package | TO-3P | TO-3P | TO-3P | TO-3PN |
FET Feature | - | - | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.2A (Tc) | 7.7A (Tc) | 7A (Tc) | 8A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V | 1430 pF @ 25 V | 1680 pF @ 25 V | 3220 pF @ 25 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Eroflueden FQA7N80 PDF DataDhusts an onsemi Dokumentatioun fir FQA7N80 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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