FDT86246 Tech Spezifikatioune
onsemi - FDT86246 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDT86246
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-223-4 | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 236mOhm @ 2A, 10V | |
Power Dissipation (Max) | 2.2W (Ta) | |
Package / Case | TO-261-4, TO-261AA | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 75 V | |
Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | |
Basis Produktnummer | FDT86 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDT86246.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDT86246 | FDT86246L | FDT86256 | FDT86102LZ |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 4.5V, 10V | 6V, 10V | 4.5V, 10V |
Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 75 V | 335 pF @ 75 V | 73 pF @ 75 V | 1490 pF @ 50 V |
Entworf fir Source Voltage (Vdss) | 150 V | 150 V | 150 V | 100 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | 2A (Ta) | 1.2A (Ta), 3A (Tc) | 6.6A (Ta) |
FET Feature | - | - | - | - |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Power Dissipation (Max) | 2.2W (Ta) | 1W (Ta) | 2.3W (Ta), 10W (Tc) | 2.2W (Ta) |
Supplier Device Package | SOT-223-4 | SOT-223-4 | SOT-223-4 | SOT-223-4 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 236mOhm @ 2A, 10V | 228mOhm @ 2A, 10V | 845mOhm @ 1.2A, 10V | 28mOhm @ 6.6A, 10V |
Basis Produktnummer | FDT86 | FDT86246 | FDT86 | FDT86102 |
Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V | 6.3 nC @ 10 V | 2 nC @ 10 V | 25 nC @ 10 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 2.5V @ 250µA | 4V @ 250µA | 3V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden FDT86246 PDF DataDhusts an onsemi Dokumentatioun fir FDT86246 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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