FDT86102LZ Tech Spezifikatioune
onsemi - FDT86102LZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDT86102LZ
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-223-4 | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6.6A, 10V | |
| Power Dissipation (Max) | 2.2W (Ta) | |
| Package / Case | TO-261-4, TO-261AA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.6A (Ta) | |
| Basis Produktnummer | FDT86102 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDT86102LZ.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDT86102LZ | FDT55AN06LA0 | FDT461N | FDT86106LZ |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6.6A, 10V | 46mOhm @ 11A, 10V | 2Ohm @ 540mA, 10V | 108mOhm @ 3.2A, 10V |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| Basis Produktnummer | FDT86102 | FDT55 | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Bulk |
| Entworf fir Source Voltage (Vdss) | 100 V | 60 V | 100 V | 100 V |
| Supplier Device Package | SOT-223-4 | SOT-223-4 | SOT-223-4 | SOT-223-4 |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 10 nC @ 10 V | 4 nC @ 10 V | 7 nC @ 10 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.6A (Ta) | 12.1A (Tc) | 540mA (Ta) | 3.2A (Ta) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 2.2W (Ta) | 8.9W (Tc) | 1.13W (Ta) | 1W (Ta) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 5V, 10V | 4.5V, 10V | 4.5V, 10V |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 2V @ 250µA | 2.2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 50 V | 1130 pF @ 25 V | 74 pF @ 25 V | 315 pF @ 50 V |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
Eroflueden FDT86102LZ PDF DataDhusts an onsemi Dokumentatioun fir FDT86102LZ - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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