FDPF55N06 Tech Spezifikatioune
onsemi - FDPF55N06 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDPF55N06
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | UniFET™ | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 27.5A, 10V | |
Power Dissipation (Max) | 48W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) | |
Basis Produktnummer | FDPF55 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDPF55N06.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDPF55N06 | FDPF44N25T | FDPF51N25 | FDPF4N60NZ |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F-3 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 60 V | 250 V | 250 V | 600 V |
Serie | UniFET™ | UniFET™ | UniFET™ | UniFET-II™ |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 48W (Tc) | 38W (Tc) | 38W (Tc) | 28W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V | 2870 pF @ 25 V | 3410 pF @ 25 V | 510 pF @ 25 V |
Basis Produktnummer | FDPF55 | FDPF44 | FDPF51 | FDPF4 |
Vgs (Max) | ±25V | ±30V | ±30V | ±25V |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 61 nC @ 10 V | 70 nC @ 10 V | 10.8 nC @ 10 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) | 44A (Tc) | 51A (Tc) | 3.8A (Tc) |
Rds On (Max) @ Id, Vgs | 22mOhm @ 27.5A, 10V | 69mOhm @ 22A, 10V | 60mOhm @ 25.5A, 10V | 2.5Ohm @ 1.9A, 10V |
Eroflueden FDPF55N06 PDF DataDhusts an onsemi Dokumentatioun fir FDPF55N06 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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