FDPF4N60NZ Tech Spezifikatioune
onsemi - FDPF4N60NZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDPF4N60NZ
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | UniFET-II™ | |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.9A, 10V | |
Power Dissipation (Max) | 28W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.8A (Tc) | |
Basis Produktnummer | FDPF4 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDPF4N60NZ.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDPF4N60NZ | FDPF39N20TLDTU | FDPF55N06 | FDPF52N20T |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
FET Feature | - | - | - | - |
Vgs (Max) | ±25V | ±30V | ±25V | ±30V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.8A (Tc) | 39A (Tc) | 55A (Tc) | 52A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V | 2130 pF @ 25 V | 1510 pF @ 25 V | 2900 pF @ 25 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Supplier Device Package | TO-220F-3 | TO-220F | TO-220F-3 | TO-220F-3 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Basis Produktnummer | FDPF4 | FDPF39 | - | FDPF5 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V | 49 nC @ 10 V | 37 nC @ 10 V | 63 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 600 V | 200 V | 60 V | 200 V |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.9A, 10V | 66mOhm @ 19.5A, 10V | 22mOhm @ 27.5A, 10V | 49mOhm @ 26A, 10V |
Package protegéieren | Tube | Tube | Bulk | Tube |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | UniFET-II™ | - | UniFET™ | UniFET™ |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 28W (Tc) | 37W (Tc) | 48W (Tc) | 38.5W (Tc) |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Eroflueden FDPF4N60NZ PDF DataDhusts an onsemi Dokumentatioun fir FDPF4N60NZ - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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