FDP150N10A Tech Spezifikatioune
onsemi - FDP150N10A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDP150N10A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 50A, 10V | |
| Power Dissipation (Max) | 91W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
| Basis Produktnummer | FDP150 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDP150N10A.
| Produktiounsattriff |  |
|
|
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|---|---|---|---|---|
| Part Number | FDP150N10A | FDP15N50 | FDP15N65 | FDP13AN06A0 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Entworf fir Source Voltage (Vdss) | 100 V | 500 V | 650 V | 60 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 50 V | 1850 pF @ 25 V | 3095 pF @ 25 V | 1350 pF @ 25 V |
| Basis Produktnummer | FDP150 | FDP15 | FDP15 | FDP13 |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 6V, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | 41 nC @ 10 V | 63 nC @ 10 V | 29 nC @ 10 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 15A (Tc) | 15A (Tc) | 10.9A (Ta), 62A (Tc) |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 50A, 10V | 380mOhm @ 7.5A, 10V | 440mOhm @ 7.5A, 10V | 13.5mOhm @ 62A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
| Serie | PowerTrench® | - | UniFET™ | PowerTrench® |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±30V | ±30V | ±20V |
| Power Dissipation (Max) | 91W (Tc) | 300W (Tc) | 250W (Tc) | 115W (Tc) |
Eroflueden FDP150N10A PDF DataDhusts an onsemi Dokumentatioun fir FDP150N10A - onsemi.
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FDP150N10A-F102ONsemiFDP15N65Fairchild SemiconductorMOSFET N-CH 650V 15A TO220-3FDP14AN06LA0Fairchild SemiconductorMOSFET N-CH 60V 10A/67A TO220-3FDP15N50Fairchild SemiconductorMOSFET N-CH 500V 15A TO220-3FDP15N40onsemiMOSFET N-CH 400V 15A TO220-3FDP15N40 MOSFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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