FDP14AN06LA0 Tech Spezifikatioune
onsemi - FDP14AN06LA0 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDP14AN06LA0
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 11.6mOhm @ 67A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta), 67A (Tc) | |
Basis Produktnummer | FDP14 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDP14AN06LA0.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDP14AN06LA0 | FDP14AN06LA0 | FDP13AN06A0 | FDP12N50NZ |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
Package protegéieren | Tube | Tube | Tube | Bulk |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 6V, 10V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta), 67A (Tc) | 10A (Ta), 67A (Tc) | 10.9A (Ta), 62A (Tc) | 11.5A (Tc) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | - |
Rds On (Max) @ Id, Vgs | 11.6mOhm @ 67A, 10V | 11.6mOhm @ 67A, 10V | 13.5mOhm @ 62A, 10V | 520mOhm @ 5.75A, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±25V |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 500 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Basis Produktnummer | FDP14 | - | - | - |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Power Dissipation (Max) | 125W (Tc) | 125W (Tc) | 115W (Tc) | 170W (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 5 V | 31 nC @ 5 V | 29 nC @ 10 V | 30 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V | 2900 pF @ 25 V | 1350 pF @ 25 V | 1235 pF @ 25 V |
FET Feature | - | - | - | - |
Eroflueden FDP14AN06LA0 PDF DataDhusts an onsemi Dokumentatioun fir FDP14AN06LA0 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.