FDC3601N Tech Spezifikatioune
onsemi - FDC3601N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDC3601N
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SuperSOT™-6 | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 1A, 10V | |
| Power - Max | 700mW | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 153pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 100V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | FDC3601 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDC3601N.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | FDC3601N | FDC3535 | FDC3535 MOS | FDC3535-NL |
| Hiersteller | onsemi | onsemi | AMI Semiconductor/onsemi | Fairchild (onsemi) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A | 2.1A (Ta) | - | - |
| Konfiguratioun | 2 N-Channel (Dual) | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Power - Max | 700mW | - | - | - |
| Supplier Device Package | SuperSOT™-6 | SuperSOT™-6 | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V | 20 nC @ 10 V | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Basis Produktnummer | FDC3601 | FDC3535 | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 3V @ 250µA | - | - |
| Entworf fir Source Voltage (Vdss) | 100V | 80 V | - | - |
| Serie | PowerTrench® | PowerTrench® | - | - |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 1A, 10V | 183mOhm @ 2.1A, 10V | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 153pF @ 50V | 880 pF @ 40 V | - | - |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | - | - |
Eroflueden FDC3601N PDF DataDhusts an onsemi Dokumentatioun fir FDC3601N - onsemi.
FDC3535onsemiMOSFET P-CH 80V 2.1A SUPERSOT6FDC3535 MOSAMI Semiconductor/onsemiFDC3535-NLFairchild (onsemi)FDC3612P-NLFairchild (onsemi)FDC37B727SMSCFDC304PFairchild (onsemi)FDC365PonsemiMOSFET P-CH 35V 4.3A SUPERSOT6FDC3512P-NLFairchild (onsemi)FDC3601N MOSAMI Semiconductor/onsemiFDC306PFairchild (onsemi)FDC37B727QFPSMSCFDC3616N-NLFDC3612onsemiMOSFET N-CH 100V 2.6A SUPERSOT6
FDC37B727-NSMicrochip TechnologyIC INTERFACE SPECIALIZED 128QFPFDC30N20DZonsemiMOSFET N-CH 30V 4.6A SUPERSOT6FDC301XXFDC3612 MOSFairchild (onsemi)FDC3512onsemiMOSFET N-CH 80V 3A SUPERSOT6| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.