FDC3512 Tech Spezifikatioune
onsemi - FDC3512 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDC3512
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SuperSOT™-6 | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 3A, 10V | |
| Power Dissipation (Max) | 1.6W (Ta) | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 634 pF @ 40 V | |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 80 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | |
| Basis Produktnummer | FDC3512 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDC3512.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | FDC3512 | FDC2612 | FDC3535 | FDC2512 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 250µA | 3V @ 250µA | 4V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 1.6W (Ta) | 1.6W (Ta) | 1.6W (Ta) | 1.6W (Ta) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 634 pF @ 40 V | 234 pF @ 100 V | 880 pF @ 40 V | 344 pF @ 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | 11 nC @ 10 V | 20 nC @ 10 V | 11 nC @ 10 V |
| Basis Produktnummer | FDC3512 | FDC2612 | FDC3535 | FDC2512 |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 3A, 10V | 725mOhm @ 1.1A, 10V | 183mOhm @ 2.1A, 10V | 425mOhm @ 1.4A, 10V |
| Supplier Device Package | SuperSOT™-6 | SuperSOT™-6 | SuperSOT™-6 | SuperSOT™-6 |
| FET Feature | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 10V | 4.5V, 10V | 6V, 10V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | 1.1A (Ta) | 2.1A (Ta) | 1.4A (Ta) |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| Entworf fir Source Voltage (Vdss) | 80 V | 200 V | 80 V | 150 V |
Eroflueden FDC3512 PDF DataDhusts an onsemi Dokumentatioun fir FDC3512 - onsemi.
FDC3601N MOSAMI Semiconductor/onsemi
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FDC2214RGHTTexas InstrumentsIC CAPACITIVE SENSING 16WQFNFDC30N20DZonsemiMOSFET N-CH 30V 4.6A SUPERSOT6FDC3612onsemiMOSFET N-CH 100V 2.6A SUPERSOT6FDC3535-NLFairchild (onsemi)FDC301XXFDC3535 MOSAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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