FCPF380N60 Tech Spezifikatioune
onsemi - FCPF380N60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FCPF380N60
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | SuperFET® II | |
Rds On (Max) @ Id, Vgs | 380mOhm @ 5A, 10V | |
Power Dissipation (Max) | 31W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1665 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.2A (Tc) | |
Basis Produktnummer | FCPF380 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FCPF380N60.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FCPF380N60 | FCPF380N60E | FCPF400N60 | FCPF360N65S3R0L |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Power Dissipation (Max) | 31W (Tc) | 31W (Tc) | 31W (Tc) | 27W (Tc) |
Serie | SuperFET® II | SuperFET® II | SuperFET® II | SuperFET® III |
Vgs (Max) | ±20V | ±20V | ±20V | ±30V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-220F-3 | TO-220F | TO-220F-3 | TO-220F-3 |
Rds On (Max) @ Id, Vgs | 380mOhm @ 5A, 10V | 380mOhm @ 5A, 10V | 400mOhm @ 5A, 10V | 360mOhm @ 5A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Basis Produktnummer | FCPF380 | FCPF380 | - | FCPF360 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Bulk | Bulk | Tube |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.2A (Tc) | 10.2A (Tc) | 10A (Tc) | 10A (Tc) |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 650 V |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | 3.5V @ 250µA | 3.5V @ 250µA | 4.5V @ 1mA |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 45 nC @ 10 V | 38 nC @ 10 V | 18 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1665 pF @ 25 V | 1770 pF @ 25 V | 1580 pF @ 25 V | 730 pF @ 400 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Eroflueden FCPF380N60 PDF DataDhusts an onsemi Dokumentatioun fir FCPF380N60 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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