FCPF400N60 Tech Spezifikatioune
Fairchild Semiconductor - FCPF400N60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FCPF400N60
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | SuperFET® II | |
Rds On (Max) @ Id, Vgs | 400mOhm @ 5A, 10V | |
Power Dissipation (Max) | 31W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1580 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FCPF400N60.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FCPF400N60 | FCPF380N60 | FCPF4300N80Z | FCPF380N65FL1 |
Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | 40 nC @ 10 V | 8.8 nC @ 10 V | 43 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1580 pF @ 25 V | 1665 pF @ 25 V | 355 pF @ 100 V | 1680 pF @ 100 V |
Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F-3 |
Serie | SuperFET® II | SuperFET® II | SuperFET® II | FRFET®, SuperFET® II |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | 10.2A (Tc) | 1.6A (Tc) | 10.2A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Rds On (Max) @ Id, Vgs | 400mOhm @ 5A, 10V | 380mOhm @ 5A, 10V | 4.3Ohm @ 800mA, 10V | 380mOhm @ 5.1A, 10V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Bulk | Bulk | Bulk | Tube |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | 3.5V @ 250µA | 4.5V @ 160µA | 5V @ 1mA |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 800 V | 650 V |
Power Dissipation (Max) | 31W (Tc) | 31W (Tc) | 19.2W (Tc) | 33W (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.