FCP290N80 Tech Spezifikatioune
onsemi - FCP290N80 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FCP290N80
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4.5V @ 1.7mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | SuperFET® II | |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 8.5A, 10V | |
| Power Dissipation (Max) | 212W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3205 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 800 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | |
| Basis Produktnummer | FCP290 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | Not Applicable |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FCP290N80.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FCP290N80 | FCP22N60N | FCP380N60E | FCP380N60 |
| Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Serie | SuperFET® II | SupreMOS™ | SuperFET® II | SuperFET® II |
| Input Capacitance (Ciss) (Max) @ Vds | 3205 pF @ 100 V | 1950 pF @ 100 V | 1770 pF @ 25 V | 1665 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 8.5A, 10V | 165mOhm @ 11A, 10V | 380mOhm @ 5A, 10V | 380mOhm @ 5A, 10V |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V | ±45V | ±20V | ±20V |
| Basis Produktnummer | FCP290 | - | FCP380 | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 22A (Tc) | 10.2A (Tc) | 10.2A (Tc) |
| Power Dissipation (Max) | 212W (Tc) | 205W (Tc) | 106W (Tc) | 106W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | 45 nC @ 10 V | 45 nC @ 10 V | 40 nC @ 10 V |
| Vgs (th) (Max) @ Id | 4.5V @ 1.7mA | 4V @ 250µA | 3.5V @ 250µA | 3.5V @ 250µA |
| Package protegéieren | Tube | Bulk | Tube | Bulk |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 800 V | 600 V | 600 V | 600 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden FCP290N80 PDF DataDhusts an onsemi Dokumentatioun fir FCP290N80 - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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