ECH8320-TL-H Tech Spezifikatioune
onsemi - ECH8320-TL-H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - ECH8320-TL-H
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-ECH | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 14.5mOhm @ 5A, 4.5V | |
Power Dissipation (Max) | 1.6W (Ta) | |
Package / Case | 8-SMD, Flat Lead | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.5A (Ta) | |
Basis Produktnummer | ECH8320 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi ECH8320-TL-H.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | ECH8320-TL-H | ECH8308-P-TL-H | ECH8420-TL-H | ECH8402-TL-E |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 10 V | - | 2430 pF @ 10 V | 1400 pF @ 10 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | - | - | - | - |
Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
FET Typ | P-Channel | - | N-Channel | N-Channel |
Supplier Device Package | 8-ECH | 8-ECH | 8-ECH | 8-ECH |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.5A (Ta) | - | 14A (Ta) | 10A (Ta) |
Operatioun Temperatur | 150°C (TJ) | - | 150°C (TJ) | 150°C (TJ) |
Vgs (Max) | ±10V | - | ±12V | - |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | - | 29 nC @ 4.5 V | 28 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | ECH8320 | ECH8308 | ECH8420 | - |
Vgs (th) (Max) @ Id | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | - | 1.8V, 4.5V | - |
Power Dissipation (Max) | 1.6W (Ta) | - | 1.6W (Ta) | 1.6W (Ta) |
Entworf fir Source Voltage (Vdss) | 20 V | - | 20 V | 30 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Rds On (Max) @ Id, Vgs | 14.5mOhm @ 5A, 4.5V | - | 6.8mOhm @ 7A, 4.5V | 15mOhm @ 5A, 10V |
Eroflueden ECH8320-TL-H PDF DataDhusts an onsemi Dokumentatioun fir ECH8320-TL-H - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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