ECH8310-TL-H Tech Spezifikatioune
onsemi - ECH8310-TL-H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - ECH8310-TL-H
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-ECH | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 4.5A, 10V | |
| Power Dissipation (Max) | 1.5W (Ta) | |
| Package / Case | 8-SMD, Flat Lead | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Ta) | |
| Basis Produktnummer | ECH8310 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi ECH8310-TL-H.
| Produktiounsattriff |  |
|
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|---|---|---|---|---|
| Part Number | ECH8310-TL-H | ECH8308-P-TL-H | ECH8410-TL-H | ECH8308-TL-H |
| Hiersteller | onsemi | onsemi | Sanyo | onsemi |
| Entworf fir Source Voltage (Vdss) | 30 V | - | 30 V | 12 V |
| Serie | - | - | - | - |
| Supplier Device Package | 8-ECH | 8-ECH | SOT-28FL/ECH8 | 8-ECH |
| Power Dissipation (Max) | 1.5W (Ta) | - | 1.6W (Ta) | 1.6W (Ta) |
| Vgs (th) (Max) @ Id | - | - | 2.6V @ 1mA | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | - | - | 1.8V, 4.5V |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Ta) | - | 12A (Ta) | 10A (Ta) |
| Basis Produktnummer | ECH8310 | ECH8308 | - | ECH8308 |
| Vgs (Max) | ±20V | - | ±20V | ±10V |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | - | 31 nC @ 10 V | 26 nC @ 4.5 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 4.5A, 10V | - | 10mOhm @ 6A, 10V | 12.5mOhm @ 5A, 4.5V |
| Operatioun Temperatur | 150°C (TJ) | - | 150°C | 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 10 V | - | 1700 pF @ 10 V | 2300 pF @ 6 V |
| FET Typ | P-Channel | - | N-Channel | P-Channel |
| Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
Eroflueden ECH8310-TL-H PDF DataDhusts an onsemi Dokumentatioun fir ECH8310-TL-H - onsemi.
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ECH8320-TL-HFairchild SemiconductorMOSFET P-CH 20V 9.5A SOT28FLECH8302-TL-EAMI Semiconductor/onsemiECH8305-TL-EonsemiMOSFET P-CH 60V 4A 8ECHECH8315-TL-HonsemiMOSFET P-CH 30V 7.5A 8ECHECH8402-TL-EonsemiMOSFET N-CH 30V 10A 8ECH
ECH762RM-B3157902PDINKLE Corporation USAECH8304-TL-ESanyoMOSFET P-CH 12V 9.5A 8ECHECH8301-TLAMI Semiconductor/onsemiECH8301-TL-ESanyoP-CHANNEL SILICON MOS FET FOR GEECH8311-TL-HonsemiPCH 2.5V DRIVE SERIESECH8320-TL-HonsemiMOSFET P-CH 20V 9.5A 8ECH| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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