NXPSC04650D6J Tech Spezifikatioune
WeEn Semiconductors - NXPSC04650D6J technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu WeEn Semiconductors - NXPSC04650D6J
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | WeEn Semiconductors Co., Ltd | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 4 A | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Technologie | SiC (Silicon Carbide) Schottky | |
| Supplier Device Package | DPAK | |
| Speed | No Recovery Time > 500mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 0 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 170 µA @ 650 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 4A | |
| Capacitance @ Vr, F. | 130pF @ 1V, 1MHz | |
| Basis Produktnummer | NXPSC |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu WeEn Semiconductors NXPSC04650D6J.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | NXPSC04650D6J | NXPSC04650B6J | NXPSC08650Q | NXPSC04650DJ |
| Hiersteller | WeEn Semiconductors | WeEn Semiconductors | WeEn Semiconductors | WeEn Semiconductors |
| Supplier Device Package | DPAK | D2PAK | TO-220AC | DPAK |
| Basis Produktnummer | NXPSC | NXPSC | NXPSC | NXPSC |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 4A | 4A | 8A | 4A |
| Technologie | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Operatiounstemperatur - Junction | 175°C (Max) | 175°C (Max) | 175°C (Max) | 175°C (Max) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
| Serie | - | - | - | - |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns |
| Capacitance @ Vr, F. | 130pF @ 1V, 1MHz | 130pF @ 1V, 1MHz | 260pF @ 1V, 1MHz | 130pF @ 1V, 1MHz |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
| Aktuell - Reverse Leakage @ Vr | 170 µA @ 650 V | 170 µA @ 650 V | 230 µA @ 650 V | 170 µA @ 650 V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-2 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V | 650 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 4 A | 1.7 V @ 4 A | 1.7 V @ 8 A | 1.7 V @ 4 A |
Eroflueden NXPSC04650D6J PDF DataDhusts an WeEn Semiconductors Dokumentatioun fir NXPSC04650D6J - WeEn Semiconductors.
NXPSC08650WEEN/NXPNXPSC06650XWeEn Semiconductors Co., Ltd
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NXPS2P33Lattice Semiconductor| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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