TN2404K-T1-E3 Tech Spezifikatioune
Vishay Siliconix - TN2404K-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - TN2404K-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 300mA, 10V | |
| Power Dissipation (Max) | 360mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 240 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | |
| Basis Produktnummer | TN2404 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix TN2404K-T1-E3.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | TN2404K-T1-E3 | TN2130K1-G | TN2425N8-G | TN2404K-T1-GE3 |
| Hiersteller | Vishay Siliconix | Microchip Technology | Microchip Technology | Vishay Siliconix |
| Entworf fir Source Voltage (Vdss) | 240 V | 300 V | 250 V | 240 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | 85mA (Tj) | 480mA (Tj) | 200mA (Ta) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | 4.5V | 3V, 10V | 2.5V, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) | TO-236AB (SOT23) | SOT-89-3 | SOT-23-3 (TO-236) |
| Power Dissipation (Max) | 360mW (Ta) | 360mW (Tc) | 1.6W (Tc) | 360mW (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 300mA, 10V | 25Ohm @ 120mA, 4.5V | 3.5Ohm @ 500mA, 10V | 4Ohm @ 300mA, 10V |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2.4V @ 1mA | 2.5V @ 1mA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V | - | - | 8 nC @ 10 V |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Basis Produktnummer | TN2404 | TN2130 | TN2425 | TN2404 |
| Serie | - | - | - | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-243AA | TO-236-3, SC-59, SOT-23-3 |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden TN2404K-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir TN2404K-T1-E3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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