SUP85N03-3M6P-GE3 Tech Spezifikatioune
Vishay Siliconix - SUP85N03-3M6P-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SUP85N03-3M6P-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220AB | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 3.6mOhm @ 22A, 10V | |
Power Dissipation (Max) | 3.1W (Ta), 78.1W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3535 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 85A (Tc) | |
Basis Produktnummer | SUP85 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SUP85N03-3M6P-GE3.
Produktiounsattriff | ||||
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Part Number | SUP85N03-3M6P-GE3 | SUP85N02-03-E3 | SUP85N03-04P-E3 | SUP85N10-10-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Power Dissipation (Max) | 3.1W (Ta), 78.1W (Tc) | 250W (Tc) | 3.75W (Ta), 166W (Tc) | 3.75W (Ta), 250W (Tc) |
Vgs (Max) | ±20V | ±8V | ±20V | ±20V |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 3.6mOhm @ 22A, 10V | 3mOhm @ 30A, 4.5V | 4.3mOhm @ 30A, 10V | 10.5mOhm @ 30A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3535 pF @ 15 V | 21250 pF @ 20 V | 4500 pF @ 25 V | 6550 pF @ 25 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | 200 nC @ 4.5 V | 90 nC @ 10 V | 160 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 85A (Tc) | 85A (Tc) | 85A (Tc) | 85A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | - |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 450mV @ 2mA (Min) | 3V @ 250µA | 3V @ 250µA |
Basis Produktnummer | SUP85 | SUP85 | SUP85 | SUP85 |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 30 V | 100 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | 4.5V, 10V | 4.5V, 10V |
Eroflueden SUP85N03-3M6P-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SUP85N03-3M6P-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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