SUM90P10-19L-E3 Tech Spezifikatioune
Vishay Siliconix - SUM90P10-19L-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SUM90P10-19L-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-263 (D²Pak) | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 19mOhm @ 20A, 10V | |
Power Dissipation (Max) | 13.6W (Ta), 375W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 11100 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 326 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 90A (Tc) | |
Basis Produktnummer | SUM90 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SUM90P10-19L-E3 | SUM90N08-4M8P-E3 | SUM90N06-4M4P-E3 | SUM90N06-5M5P-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 90A (Tc) | 90A (Tc) | 90A (Tc) | 90A (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | SUM90 | SUM90 | SUM90 | SUM90 |
Entworf fir Source Voltage (Vdss) | 100 V | 75 V | 60 V | 60 V |
Vgs (Max) | ±20V | - | ±20V | ±20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | TO-263 (D²Pak) | TO-263 (D²Pak) | TO-263 (D²Pak) | TO-263 (D²Pak) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 11100 pF @ 50 V | 6460 pF @ 40 V | 6190 pF @ 30 V | 4700 pF @ 30 V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 4V @ 250µA | 4.5V @ 250µA | 4.5V @ 250µA |
Serie | TrenchFET® | - | TrenchFET® | TrenchFET® |
Rds On (Max) @ Id, Vgs | 19mOhm @ 20A, 10V | 4.8mOhm @ 20A, 10V | 4.4mOhm @ 20A, 10V | 5.5mOhm @ 20A, 10V |
FET Feature | - | - | - | - |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 13.6W (Ta), 375W (Tc) | - | 3.75W (Ta), 300W (Tc) | 3.75W (Ta), 272W (Tc) |
Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 326 nC @ 10 V | 160 nC @ 10 V | 160 nC @ 10 V | 120 nC @ 10 V |
Eroflueden SUM90P10-19L-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SUM90P10-19L-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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