SUM60030E-GE3 Tech Spezifikatioune
Vishay Siliconix - SUM60030E-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SUM60030E-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-263 (D²Pak) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 10V | |
| Power Dissipation (Max) | 375W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 7910 pF @ 40 V | |
| Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 7.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 80 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
| Basis Produktnummer | SUM60030 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SUM60030E-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SUM60030E-GE3 | SUM60020E-GE3 | SUM50P10-42-E3 | SUM55P06-19L-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V | 227 nC @ 10 V | 160 nC @ 10 V | 115 nC @ 10 V |
| Entworf fir Source Voltage (Vdss) | 80 V | 80 V | 100 V | 60 V |
| Basis Produktnummer | SUM60030 | SUM60020 | SUM50 | SUM55 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 150A (Tc) | 36A (Tc) | 55A (Tc) |
| Power Dissipation (Max) | 375W (Tc) | 375W (Tc) | 18.8W (Ta), 125W (Tc) | 3.75W (Ta), 125W (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-263 (D²Pak) | TO-263 (D²Pak) | TO-263 (D²Pak) | TO-263 (D²Pak) |
| Input Capacitance (Ciss) (Max) @ Vds | 7910 pF @ 40 V | 10680 pF @ 40 V | 4600 pF @ 50 V | 3500 pF @ 25 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 10V | 2.1mOhm @ 30A, 10V | 4.2mOhm @ 14A, 10V | 19mOhm @ 30A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 7.5V, 10V | 7.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Eroflueden SUM60030E-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SUM60030E-GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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