SUD50N03-06P-E3 Tech Spezifikatioune
Vishay Siliconix - SUD50N03-06P-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SUD50N03-06P-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V | |
Power Dissipation (Max) | 8.3W (Ta), 88W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 84A (Tc) | |
Basis Produktnummer | SUD50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SUD50N03-06P-E3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SUD50N03-06P-E3 | SUD50N03-09P-E3 | SUD50N03-06AP-E3 | SUD50N03-07AP |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | SILICONIX |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | - |
Supplier Device Package | TO-252AA | TO-252AA | TO-252AA | - |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V | 2200 pF @ 25 V | 3800 pF @ 15 V | - |
Basis Produktnummer | SUD50 | SUD50 | SUD50 | - |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | - |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V | 9.5mOhm @ 20A, 10V | 5.7mOhm @ 20A, 10V | - |
Power Dissipation (Max) | 8.3W (Ta), 88W (Tc) | 7.5W (Ta), 65.2W (Tc) | 10W (Ta), 83W (Tc) | - |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 2.4V @ 250µA | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 84A (Tc) | 63A (Tc) | 90A (Tc) | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V | 16 nC @ 4.5 V | 95 nC @ 10 V | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Eroflueden SUD50N03-06P-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SUD50N03-06P-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.