SUD19P06-60-GE3 Tech Spezifikatioune
Vishay Siliconix - SUD19P06-60-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SUD19P06-60-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 10V | |
Power Dissipation (Max) | 2.3W (Ta), 38.5W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18.3A (Tc) | |
Basis Produktnummer | SUD19 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SUD19P06-60-GE3.
Produktiounsattriff | ||||
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Part Number | SUD19P06-60-GE3 | SUD19P06-60-E3 | SUD20N10-66L-BE3 | SUD19P06-60L-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 2.3W (Ta), 38.5W (Tc) | 2.3W (Ta), 38.5W (Tc) | 2.1W (Ta), 41.7W (Tc) | 2.7W (Ta), 46W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18.3A (Tc) | 18.3A (Tc) | 16.9A (Tc) | 19A (Tc) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 100 V | 60 V |
Basis Produktnummer | SUD19 | SUD19 | SUD20 | SUD19 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
Supplier Device Package | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 10V | 60mOhm @ 10A, 10V | 66mOhm @ 6.6A, 10V | 60mOhm @ 10A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | 1710 pF @ 25 V | 860 pF @ 50 V | 1710 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 40 nC @ 10 V | 30 nC @ 10 V | 40 nC @ 10 V |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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