SQS411ENW-T1_GE3 Tech Spezifikatioune
Vishay Siliconix - SQS411ENW-T1_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQS411ENW-T1_GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® 1212-8W | |
| Serie | Automotive, AEC-Q101, TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 27.3mOhm @ 8A, 10V | |
| Power Dissipation (Max) | 39.5W (Tc) | |
| Package / Case | PowerPAK® 1212-8W | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3191 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | |
| Basis Produktnummer | SQS411 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQS411ENW-T1_GE3.
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|---|---|---|---|---|
| Part Number | SQS411ENW-T1_GE3 | SQS460EN-T1_BE3 | SQS405EN-T1_GE3 | SQS415ENW-T1_GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Entworf fir Source Voltage (Vdss) | 40 V | 60 V | 12 V | 40 V |
| FET Typ | P-Channel | N-Channel | P-Channel | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | 20 nC @ 10 V | 75 nC @ 8 V | 82 nC @ 10 V |
| Package / Case | PowerPAK® 1212-8W | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8W |
| Rds On (Max) @ Id, Vgs | 27.3mOhm @ 8A, 10V | 36mOhm @ 5.3A, 10V | 20mOhm @ 13.5A, 4.5V | 16.1mOhm @ 12A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Basis Produktnummer | SQS411 | SQS460 | SQS405 | SQS415 |
| Supplier Device Package | PowerPAK® 1212-8W | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8W |
| Serie | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
| Power Dissipation (Max) | 39.5W (Tc) | 39W (Tc) | 39W (Tc) | 62.5W (Tc) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 2.5V, 4.5V | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 1V @ 250µA | 2.5V @ 250µA |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±8V | ±20V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | 8A (Tc) | 16A (Tc) | 16A (Tc) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 3191 pF @ 25 V | 755 pF @ 25 V | 2650 pF @ 6 V | 4825 pF @ 25 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden SQS411ENW-T1_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQS411ENW-T1_GE3 - Vishay Siliconix.
SQS460EN-T1-GE3V1SHAYSQS460EN-T1_BE3Vishay SiliconixMOSFET N-CH 60V 8A PPAK1212-8SQS405EN-T1_GE3Vishay SiliconixMOSFET P-CH 12V 16A PPAK1212-8
SQS415ENWElectro-Films (EFI) / VishaySQS401EN-T1-GE3Electro-Films (EFI) / VishaySQS401EN-T1-BE3Electro-Films (EFI) / VishaySQS415ENW-T1_GE3Vishay SiliconixMOSFET P-CH 40V 16A PPAK1212-8WSQS401ENW-T1_GE3VishaySQS462EN-T1-GE3Electro-Films (EFI) / VishaySQS405ENW-T1-GE3Electro-Films (EFI) / VishaySQS415ENW-T1-GE3VishaySQS405EN-T1-GE3Electro-Films (EFI) / VishaySQS37-2R2M-RMAGSQS423EN-T1-GE3Electro-Films (EFI) / VishaySQS460EN-T1_GE3VishaySQS401EN-T1_GE3Vishay SiliconixMOSFET P-CH 40V 16A PPAK1212-8SQS401EN-T1_BE3Vishay SiliconixMOSFET P-CH 40V 16A PPAK1212-8SQS460EN-TI-GE3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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