SQJA90EP-T1_GE3 Tech Spezifikatioune
Vishay Siliconix - SQJA90EP-T1_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQJA90EP-T1_GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SO-8 | |
Serie | Automotive, AEC-Q101, TrenchFET® | |
Rds On (Max) @ Id, Vgs | 7.6mOhm @ 10A, 10V | |
Power Dissipation (Max) | 68W (Tc) | |
Package / Case | PowerPAK® SO-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | |
Basis Produktnummer | SQJA90 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQJA90EP-T1_GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SQJA90EP-T1_GE3 | SQJA82EP-T1_GE3 | SQJA72EP-T1_GE3 | SQJA96EP-T1_GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Power Dissipation (Max) | 68W (Tc) | 68W (Tc) | 55W (Tc) | 48W (Tc) |
Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 3.5V @ 250µA |
Rds On (Max) @ Id, Vgs | 7.6mOhm @ 10A, 10V | 8.2mOhm @ 10A, 10V | 19mOhm @ 10A, 10V | 21.5mOhm @ 10A, 10V |
Entworf fir Source Voltage (Vdss) | 80 V | 80 V | 100 V | 80 V |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | 60 nC @ 10 V | 30 nC @ 10 V | 25 nC @ 10 V |
Serie | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 60A (Tc) | 37A (Tc) | 30A (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V | 3000 pF @ 25 V | 1390 pF @ 25 V | 1200 pF @ 25 V |
Basis Produktnummer | SQJA90 | SQJA82 | SQJA72 | SQJA96 |
Eroflueden SQJA90EP-T1_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQJA90EP-T1_GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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