SQD50P04-13L_GE3 Tech Spezifikatioune
Vishay Siliconix - SQD50P04-13L_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQD50P04-13L_GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-252AA | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 17A, 10V | |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3590 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
| Basis Produktnummer | SQD50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQD50P04-13L_GE3.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | SQD50P04-13L_GE3 | SQD50P04-13L_T4GE3 | SQD50P03-07_GE3 | SQD50P04-09L_GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) | 3W (Ta), 136W (Tc) | 136W (Tc) | 136W (Tc) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 30 V | 40 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Basis Produktnummer | SQD50 | - | SQD50 | SQD50 |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | TrenchFET® | - | - | TrenchFET® |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 50A (Tc) | 50A (Tc) | 50A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | 80 nC @ 10 V | 146 nC @ 10 V | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3590 pF @ 20 V | 3590 pF @ 25 V | 5490 pF @ 25 V | 6675 pF @ 20 V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 17A, 10V | 13mOhm @ 17A, 10V | 7mOhm @ 20A, 10V | 9.4mOhm @ 17A, 10V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden SQD50P04-13L_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQD50P04-13L_GE3 - Vishay Siliconix.
SQD50P04-13L-T4GE3Electro-Films (EFI) / VishaySQD50P06-15L-GE3 MOSElectro-Films (EFI) / VishaySQD50P04-13L_T4GE3Vishay SiliconixP-CHANNEL 40-V (D-S) 175C MOSFETSQD50P04-13L-GE3Electro-Films (EFI) / VishaySQD50P06-15LElectro-Films (EFI) / VishaySQD50P03-07_GE3Vishay SiliconixMOSFET P-CH 30V 50A TO252AASQD50P04-09LElectro-Films (EFI) / VishaySQD50P04-09L_GE3Vishay SiliconixMOSFET P-CH 40V 50A TO252SQD50P03-07-GE3Electro-Films (EFI) / VishaySQD50P08-25L-GE3VISAHYSQD50P06-15L_GE3Vishay SiliconixMOSFET P-CH 60V 50A TO252SQD50P04-13L-AAElectro-Films (EFI) / VishaySQD50P08-25LElectro-Films (EFI) / VishaySQD50P04-13LElectro-Films (EFI) / VishaySQD50P06-15L-GE3Electro-Films (EFI) / VishaySQD50P06-15L-E3Electro-Films (EFI) / VishaySQD50P04-09L-GE3Electro-Films (EFI) / VishaySQD50P06-15L-T4GE3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.